N-Channel PowerTrench® MOSFET, 20V, 0.7A, 300mΩ

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Overview

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate charge (QG) in a small package.

  • This product is general usage and suitable for many different applications.
  • 0.7A, 20V
    RDS(ON) = 300mΩ @ VGS = 4.5V
    RDS(ON) = 400mΩ @ VGS = 2.5V
  • Low gate charge (1.1nC typical)
  • High performance trench technology for extremely low RDS(ON)
  • Compact industry standard SC70-6 surface mount package

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Product

Status

CAD Models

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDG6335N

Active

Pb

A

H

P

SC-88-6 / SC-70-6 / SOT-363-6

1

260

REEL

3000

Y

N-Channel

Dual

20

12

1.5

0.7

0.3

Q1=Q2=400

Q1=Q2=300

-

1.03

1.1

113

$0.1572

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