Dual P-Channel 1.8V Specified PowerTrench® MOSFET -20 V, -0.6 A, 400 mΩ

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Overview

This P-Channel 1.8V specified MOSFET uses an advanced low voltage PowerTrench process. It has been optimized for battery power management applications.

  • This product is general usage and suitable for many different applications.
  • –0.6 A, –20 V.
  • RDS(ON)= 0.40Ω @ VGS = –4.5 V
  • RDS(ON) = 0.55Ω @ VGS = –2.5 V
  • RDS(ON) = 0.80Ω @ VGS = –1.8 V
  • Low gate charge
  • High performance trench technology for extremelylow RDS(ON)
  • Compact industry standard SC70-6 surface mountpackage

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDG6308P

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Last Shipments

CAD Model

Pb

A

H

P

SC-88-6 / SC-70-6 / SOT-363-6

1

260

REEL

3000

N

-20

-

P-Channel

Dual

8

-1.5

-0.6

0.3

Q1=Q2=550

Q1=Q2=400

0.76

1.8

153

Price N/A

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