FDD86113LZ

N-Channel Shielded Gate PowerTrench^® MOSFET 100V , 5.5 A, 104 mΩ

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Overview

This N-Channel logic Level MOSFETs are produced using an advanced Power Trench^® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.

Applications

Consumer Appliances

Features

Shielded Gate MOSFET Technology
Max r_DS(on) = 104 mΩ at V_GS = 10 V, I_D = 4.2 A
Max r_DS(on) = 156 mΩ at V_GS = 4.5 V, I_D = 3.4 A
HBM SD Protection Level > 6 kV typical (Note 4)
High Performance Trench Technology for Extremely Low r_DS(on)
High Power and Current Handling Capability in a widely used surface mount package
100% UIL Tested
RoHS Compliant

Material Composition

Product Change Notification

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

Channel Polarity

Configuration

V_(BR)DSS Min (V)

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Pricing ($/Unit)

FDD86113LZ

Active

DPAK-3 / TO-252-3

369AS

260

REEL

2500

N-Channel

Single

100

±20

5.5

156

104

1.9

213

$0.4255

Product Number:

Distributor		Stock	BUY

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MOSFETs | FDD86113LZ

N-Channel Shielded Gate PowerTrench® MOSFET 100V , 5.5 A, 104 mΩ

Overview

Availability & Samples (size)

Email Sales

N-Channel Shielded Gate PowerTrench^® MOSFET 100V , 5.5 A, 104 mΩ