N-Channel Shielded Gate PowerTrench® MOSFET 100V , 5.5 A, 104 mΩ

Favorite

Overview

This N-Channel logic Level MOSFETs are produced using an advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.

  • Consumer Appliances
  • Shielded Gate MOSFET Technology
  • Max rDS(on) = 104 mΩ at VGS = 10 V, ID = 4.2 A
  • Max rDS(on) = 156 mΩ at VGS = 4.5 V, ID = 3.4 A
  • HBM SD Protection Level > 6 kV typical (Note 4)
  • High Performance Trench Technology for Extremely Low rDS(on)
  • High Power and Current Handling Capability in a widely used surface mount package
  • 100% UIL Tested
  • RoHS Compliant

Product List

If you wish to buy products or product samples, please log in to your onsemi account.

Search

Close Search

Products:

1

Share

Product Groups:

Orderable Parts:

1

Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDD86113LZ

Loading...

Active

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

1

260

REEL

2500

Y

100

104

N-Channel

Single

±20

3

5.5

29

-

156

-

1.9

213

$0.4255

More Details

Show More

1-25 of 25

Products per page

Jump to :