Shielded Gate PowerTrench® MOSFET, N-Channel, 100 V, 50 A, 10.2 mΩ

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Overview

This N-Channel MOSFET is produced using an advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

  • AC-DC Merchant Power Supply
  • Max rDS(on) = 10.2 mΩ at VGS = 10 V, ID = 12.5 A
  • Max rDS(on) = 16 mΩ at VGS = 6 V, ID = 9.8 A
  • 100% UIL tested
  • RoHS Compliant"

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDD86110

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Active

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

1

260

REEL

2500

Y

100

10.2

N-Channel

Single

±20

4

50

127

-

-

-

25

1702

$1.0243

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