FDD850N10LD

BoostPak (N-Channel PowerTrench^® MOSFET + Diode) 100V, 15.3A, 75 mΩ

Overview

This N-Channel MOSFET is produced using a PowerTrench^® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
The NP diode is hyperfast rectifier with low forward voltage drop and excellent switching performance.

Applications

LED Monitor Backlight
LED TV Backlight
LED Lighting
Consumer Appliances

Features

R_DS(on) = 61 mΩ (Typ.)@ V_GS = 10 V, I_D = 12 A
R_DS(on) = 64 mΩ (Typ.)@ V_GS = 5.0 V, I_D = 12 A
Low Gate Charge (Typ. 22.2 nC)
Low C_rss(Typ. 42 pF)
Fast Switching
100% Avalanche Tested
Improved dv/dt Capability
RoHS Compliant

Material Composition

Product Change Notification

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDD850N10LD

Obsolete

DPAK-5

369AL

260

REEL

2500

100

N-Channel

with Si Diodes

±20

2.5

15.3

22.2

1100

Price N/A

Product Number:

Distributor		Stock	BUY

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MOSFETs | FDD850N10LD

BoostPak (N-Channel PowerTrench® MOSFET + Diode) 100V, 15.3A, 75 mΩ

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BoostPak (N-Channel PowerTrench^® MOSFET + Diode) 100V, 15.3A, 75 mΩ