P-Channel owerTrench® MOSFET, -40V, -14A, 44mΩ

Overview

This P-Channel MOSFET has been produced using a proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications.

  • This product is general usage and suitable for many different applications.

  • Max rDS(on) = 44mΩ at VGS = -10V, ID = -6.7A
  • Max rDS(on) = 64mΩ at VGS = 4.5V, ID = 5.5A
  • High performance trench technology for extremely low rDS(on)
  • RoHS compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDD4243

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Active

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

1

260

REEL

2500

Y

P-Channel

PowerTrench® T1

DPAK

Small Signal

Logic

0

Single

0

-40

44

±20

-3

-14

42

-

64

-

21

1165

4

30

165

90

$0.2689

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