N-Channel PowerTrench® MOSFET, 150V, 26A, 42mΩ

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Overview

This N-Channel MOSFET is produced using an advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

  • LED TV
  • Consumer Appliances
  • RDS(on) = 33.4mΩ ( Typ.) @ VGS = 10V, ID = 26A
  • RDS(on) = 42.2mΩ ( Typ.) @ VGS = 4.5V, ID = 20A
  • Fast Switching Speed
  • Low gate charge, QG = 17.6nC ( Typ.) @ VGS = 10V
  • High Performance Trench Technology for Extremely Low RDS(on)
  • High Power and Current Handling Capability
  • RoHS Compliant

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ECAD Models

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Package Type

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MSL Temp (°C)

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Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDD390N15ALZ

Active

Pb

A

H

P

DPAK-3 / TO-252-3

1

260

REEL

2500

Y

N-Channel

Single

150

±20

2.8

26

63

-

64

42

-

8.1

1323

$0.505

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