N-Channel PowerTrench® MOSFET 100V, 6.8A, 160mΩ

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Overview

This N-Channel MOSFET is produced using an advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

  • LED TV
  • Consumer Appliances
  • RDS(on) = 124mΩ ( Typ.)@ VGS = 10V, ID = 3.5A
  • RDS(on) = 175mΩ ( Typ.)@ VGS = 5.0V, ID = 2.1A
  • Low Gate Charge ( Typ.2.78nC)
  • Low Crss ( Typ. 2.04pF)
  • Fast Switching
  • 100% Avalanche Tested
  • Improved dv/dt Capability
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

FDD1600N10ALZ

Active

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

1

260

REEL

2500

Y

N-Channel

Single

100

±20

2.8

6.8

14.9

-

200

124

-

2.78

169

$0.3374

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