FDC8601

N-Channel Shielded Gate Power Trench^® MOSFET, 100 V, 2.7 A, 109 mΩ

Overview

This N-Channel MOSFET is produced using an advanced Power Trench^® process that has been optimized for r_DS(on), switching performance and ruggedness.

Applications

This product is general usage and suitable for many different applications.

Features

Max r_DS(on) = 109 mΩat V_GS = 10 V, I_D = 2.7 A
Max r_DS(on) = 176 mΩat V_GS = 6 V, I_D = 2.1 A
High performance trench technology for extremely low r_DS(on)
High power and current handling capability in a widely used surface mount package
Fast switching speed
100% UIL Tested
RoHS Compliant

Material Composition

Product Change Notification

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MSL Type

MSL Temp (°C)

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Container Qty.

Channel Polarity

Configuration

V_(BR)DSS Min (V)

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Pricing ($/Unit)

FDC8601

Active

TSOT-23-6

419BL

260

REEL

3000

N-Channel

Single

100

±20

2.7

1.6

109

1.7

155

$0.4793

Product Number:

Distributor		Stock	BUY

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MOSFETs | FDC8601

N-Channel Shielded Gate Power Trench® MOSFET, 100 V, 2.7 A, 109 mΩ

Overview

Availability & Samples (size)

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N-Channel Shielded Gate Power Trench^® MOSFET, 100 V, 2.7 A, 109 mΩ