MOSFETs | FDC8601

N-Channel Shielded Gate Power Trench® MOSFET, 100 V, 2.7 A, 109 mΩ

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Overview

This N-Channel MOSFET is produced using an advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.

  • This product is general usage and suitable for many different applications.
  • Max rDS(on) = 109 mΩat VGS = 10 V, ID = 2.7 A
  • Max rDS(on) = 176 mΩat VGS = 6 V, ID = 2.1 A
  • High performance trench technology for extremely low rDS(on)
  • High power and current handling capability in a widely used surface mount package
  • Fast switching speed
  • 100% UIL Tested
  • RoHS Compliant

Material Composition

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDC8601

Active

Pb

A

H

P

TSOT-23-6

419BL

1

260

REEL

3000

Y

N-Channel

Single

100

±20

4

2.7

1.6

-

-

109

6

1.7

155

$0.4793

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