MOSFETs | FDC658P

Single P-Channel Logic Level PowerTrench® MOSFET -30V, -4A, 50mΩ

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Overview

This P-Channel Logic Level MOSFET is produced using an advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion.

  • This product is general usage and suitable for many different applications.
  • -4A, -30V.   RDS(ON) = 0.050 Ω @ VGS = -10 V,RDS(ON) = 0.075 Ω @ VGS = -4.5 V
  • Low gate charge (8nC typical).
  • High performance trench technology for extremely low RDS(ON).
  • SuperSOT™-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDC658P

Active

Pb

A

H

P

TSOT-23-6

419BL

1

260

REEL

3000

Y

P-Channel

Single

-30

20

-3

-4

1.6

-

75

50

-

8

750

$0.1911

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