Dual N-Channel PowerTrench® MOSFET, Logic Level, 30V, 2.5A, 95mΩ

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Overview

These N-Channel Logic Level MOSFETs are produced using an advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for all applications where small size is desireable but especially low cost DC/DC conversion in battery powered systems.

  • This product is general usage and suitable for many different applications.
  • 2.5 A, 30 V
  • RDS(ON) = 0.095 Ω @ VGS = 10 V
  • RDS(ON) = 0.145 Ω @ VGS = 4.5 V
  • Very fast switching
  • Low gate charge (2.1nC typical
  • SuperSOT™-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick)

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDC6561AN

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Active

CAD Model

Pb

A

H

P

TSOT-23-6

1

260

REEL

3000

Y

30

Q1=Q2=95

N-Channel

Dual

20

3

2.5

0.96

-

Q1=Q2=145

-

2.3

220

$0.1985

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