MOSFETs | FDC655BN

N-Channel PowerTrench® MOSFET, Logic Level, 30 V, 6.3 A, 25 mΩ

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Overview

This N-Channel Logic Level MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimized on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

  • This product is general usage and suitable for many different applications.
  • Max rDS(ON) = 25 mΩ VGS = 10V, ID = 6.3A
  • Max rDS(ON) = 33 mΩ VGS = 4.5V, ID = 5.5A
  • Fast switching
  • Low gate charge
  • High performance trench technology for extremely low rDS(ON)
  • Termination is Lead-free and RoHS Compliant

Material Composition

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CAD Models

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDC655BN

Active

Pb

A

H

P

TSOT-23-6

419BL

1

260

REEL

3000

N

N-Channel

Single

30

20

3

6.3

1.6

-

33

25

8

5

470

$0.1395

More Details

FDC655BN-F40

Last Shipments

Pb

A

H

P

TSOT-23-6

419BL

1

260

REEL

3000

N

N-Channel

Single

30

20

3

6.3

1.6

-

33

25

8

5

470

Price N/A

More Details

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