MOSFETs | FDC642P_F085

P-Channel PowerTrench® MOSFET, -20V, -4A, 100mΩ

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Overview

P-Channel PowerTrench® MOSFET, -20V, -4A, 100mΩ

  • Infotainment
  • Portable Navigation
  • Infotainment
  • Other
  • Power Train
  • Safety and Control
  • Comfort and Convenience
  • Body Electronics
  • Vehicle Security Systems
  • Other Automotive
  • Typ rDS(on) = 52.5mΩ at VGS = –4.5V, ID = –4A
  • Typ rDS(on) = 75.3mΩ at VGS = –2.5V, ID = –3.2A
  • Fast switching speed
  • Low gate charge(6.9nC typical)
  • High performance trench technology for extremely low rDS(on)
  • SuperSOT™–package:small footprint(72% smaller than standard SO–8);low profile(1mm thick).
  • RoHS compliant
  • Qualified to AEC Q101

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Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDC642P-F085P

Active, Not Rec

Pb

A

H

P

TSOT-23-6

419BL

1

260

REEL

3000

N

P-Channel

Single

-20

8

-1.5

-4

1.2

75.3

52.5

-

-

6.9

700

$0.2665

More Details

FDC642P-F085

Last Shipments

Pb

A

H

P

TSOT-23-6

419BL

1

260

REEL

3000

N

P-Channel

Single

-20

8

-1.5

-4

1.2

75.3

52.5

-

-

6.9

700

Price N/A

More Details

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