MOSFETs | FDC642P

P-Channel PowerTrench® MOSFET, 2.5V Specified -20 V, -4.0 A, 65 mΩ

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Overview

This P-Channel 2.5V specified MOSFET is produced using an PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the larger packages are impractical.

  • This product is general usage and suitable for many different applications.
  • Max rDS(ON) = 65mΩ at VGS = -4.5 V, ID = -4.0A
  • Max rDS(ON) = 100mΩ at VGS = -2.5 V, ID = -3.2A
  • Fast switching speed.
  • Low gate charge (11nC typical).
  • High performance trench technology for extremely low rDS(ON).
  • SuperSOT™-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick)
  • Termination is Lead-free and RoHS Compliant

Material Composition

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDC642P

Active

Pb

A

H

P

TSOT-23-6

419BL

1

260

REEL

3000

N

P-Channel

Single

-20

8

-1.5

-4

1.6

100

65

-

13

11

700

$0.1657

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