P-Channel PowerTrench® MOSFET, 2.5V specified, -20V, -4.5A, 48mΩ

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Overview

This P-Channel 2.5V specified MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery charging circuits, and DC/DC conversion.

  • This product is general usage and suitable for many different applications.
  • –4.5 A, –20 V.
  • RDS(ON) = 48 mΩ @ VGS = –4.5 V
    RDS(ON) = 65 mΩ @ VGS = –2.5 V
  • Low gate charge (10 nC typical)
  • High performance trench technology for extremely low RDS(ON)
  • SuperSOT ™ –6 package: small footprint (72% smaller than standard SO-8; low profile (1mm thick)

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDC638P

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Active

CAD Model

Pb

A

H

P

TSOT-23-6

1

260

REEL

3000

Y

-20

-

P-Channel

Single

8

-1.5

-4.5

1.6

65

48

11

10

1160

$0.1733

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