MOSFETs | FDC6305N

Dual N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 2.7A, 80mΩ

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Overview

These N-Channel low threshold 2.5V specified MOSFETs are produced using an advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

  • This product is general usage and suitable for many different applications.
  • 2.7 A, 20 V
  • RDS(on) = 0.08Ω @ VGS = 4.5V
  • RDS(on) = 0.12Ω @ VGS = 2.5V
  • Low gate charge (3.5nC typical)
  • Fast switching speed
  • High performance trench technology for extremelylow RDS(ON)
  • SuperSOT™ -6 package: small footprint (72% smallerthan standard SO-8); low profile (1mm thick)

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDC6305N

Active

Pb

A

H

P

TSOT-23-6

419BL

1

260

REEL

3000

Y

N-Channel

Dual

20

8

1.5

2.7

0.96

Q1=Q2=120

Q1=Q2==0.08*1000

-

3.7

3.5

310

$0.1892

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