FDC610PZ: P-Channel PowerTrench® MOSFET, -30V, -4.9A, 42mΩ

Datasheet: P-Channel PowerTrench® MOSFET -30V, -4.9A, 42mΩ
Rev. 2 (442kB)
Product Overview
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Product Change Notification
This Channel MOSFET is produced using an advanced PowerTrench® process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery charging circuits, and DC/DC conversion.
Features
 
  • Max rDS(on) = 42mΩ at VGS = -10V, ID = -4.9A
  • Max rDS(on) = 75mΩ at VGS = -4.5V, ID = -3.7A
  • Low gate charge (17nC typical).
  • High performance trench technology for extremely low rDS(on).
  • SuperSOT™-6 package: small footprint (72% smaller than standard SO-8) low profile (1mm thick).
  • RoHS compliant
Applications
  • This product is general usage and suitable for many different applications.
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FDC610PZ Active
Pb-free
Halide free
FDC610PZ TSOT-23-6 419BL 1 260 Tape and Reel 3000 $0.1729
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDC610PZ  
 $0.1729 
Pb
H
 Active   
P-Channel
Single
-30
25
-3
-4.9
1.6
-
75
42
10.5
9
755
TSOT-23-6
Case Outlines
419BL   
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