FDC602P

P-Channel PowerTrench^® MOSFET, 2.5V Specified, -20V, -5.5A, 35mΩ

Overview

This P-Channel 2.5V specified MOSFET uses a rugged gate version of an advanced PowerTrench^® process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).

Applications

This product is general usage and suitable for many different applications.

Features

-5.5 A, -20 V
R_DS(on) = 35 mΩ @ V_GS = - 4.5V
R_DS(on) = 50 mΩ @ V_GS = - 2.5V
Fast switching speed
High performance trench technology for extremelylow R_DS(ON)

Material Composition

Product Change Notification

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CAD Models

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MSL Type

MSL Temp (°C)

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Channel Polarity

Configuration

V_(BR)DSS Min (V)

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Pricing ($/Unit)

FDC602P

Active

TSOT-23-6

419BL

260

REEL

3000

P-Channel

Single

-20

-1.5

-5.5

1.6

1456

$0.2133

Product Number:

Distributor		Stock	BUY

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MOSFETs | FDC602P

P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -5.5A, 35mΩ

Overview

Availability & Samples (size)

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P-Channel PowerTrench^® MOSFET, 2.5V Specified, -20V, -5.5A, 35mΩ