Small Signal MOSFETs | FDC5614P

P-Channel PowerTrench® MOSFET, Logic Level, 60V -3A, 105mΩ

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Overview

This 60V P-Channel MOSFET uses a high voltage PowerTrench® process. It has been optimized for power management applications.

  • This product is general usage and suitable for many different applications.

  • -3 A, -60 V
  • RDS(on) = 0.105 Ω @ VGS = -10 V
  • RDS(on) = 0.135 Ω @ VGS = -4.5 V
  • Fast switching speed
  • High performance trench technology for extremely low RDS(ON)

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDC5614P

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Active

CAD Model

Pb

A

H

P

TSOT-23-6

419BL

1

260

REEL

3000

Y

P-Channel

PowerTrench® T1

SC-6

Small Signal

Logic

0

Single

0

-60

105

±20

-3

-3

1.6

-

135

0.49

15

759

3

-

90

39

$0.1916

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Reliability Data

Die Related Summary Data

Device: FDC5614P

Equivalent to wafer fab process: TR

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

TR

1

1603286882

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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