FDC5612: N-Channel PowerTrench® MOSFET 60V 4.3A, 55mΩ

Datasheet: 60V N-Channel PowerTrench® MOSFET
Rev. 3 (177kB)
Product Overview
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Product Change Notification
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Features
 
  • 4.3 A, 60 V. RDS(ON) = 0.055 Ω@ VGS = 10 V
  • RDS(ON) = 0.064 Ω @ VGS = 6 V
  • Low gate charge (12.5nC typical)
  • Fast switching speed
  • High performance trench technology for extremely low RDS(ON)
  • SuperSOT™-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick)
Applications
  • This product is general usage and suitable for many different applications.
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FDC5612 Active
Pb-free
Halide free
FDC5612 TSOT-23-6 419BL 1 260 Tape and Reel 3000 $0.2991
Market Leadtime (weeks) : Contact Factory
Avnet   (2020-08-19) : >10K

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDC5612  
 $0.2991 
Pb
H
 Active   
N-Channel
Single
60
±20
4
4.3
1.6
-
-
55
-
12.5
650
TSOT-23-6
Case Outlines
419BL   
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