FDB3682

N-Channel Power Trench^® MOSFET, 100V, 32A, 36mΩ

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Overview

N-Channel Power Trench^® MOSFET, 100V, 32A, 36mΩ, The latest shielded gate PowerTrench^® MOSFET, which combines a smaller QSYNC and soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification.

Applications

This product is general usage and suitable for many different applications.

Features

R_DS(ON) = 32mΩ(Typ.), V_GS = 10V, I_D = 32A
Q_g(tot) = 18.5nC (Typ.), V_GS = 10V
Low Miller Charge
Low Q_RR Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101

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Channel Polarity

Configuration

V_(BR)DSS Min (V)

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Pricing ($/Unit)

FDB3682

Active

D2PAK-3 / TO-263-2

418AJ

245

REEL

800

N-Channel

Single

100

±20

18.5

1250

$1.0194

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Distributor		Stock	BUY

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MOSFETs | FDB3682

N-Channel Power Trench® MOSFET, 100V, 32A, 36mΩ

Overview

Availability & Samples (size)

Email Sales

N-Channel Power Trench^® MOSFET, 100V, 32A, 36mΩ