N-Channel Power Trench® MOSFET, 100V, 32A, 36mΩ

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Overview

N-Channel Power Trench® MOSFET, 100V, 32A, 36mΩ, The latest shielded gate PowerTrench® MOSFET, which combines a smaller QSYNC and soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification.

  • This product is general usage and suitable for many different applications.
  • RDS(ON) = 32mΩ(Typ.), VGS = 10V, ID = 32A
  • Qg(tot) = 18.5nC (Typ.), VGS = 10V
  • Low Miller Charge
  • Low QRR Body Diode
  • UIS Capability (Single Pulse and Repetitive Pulse)
  • Qualified to AEC Q101

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDB3682

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Active

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

1

245

REEL

800

Y

100

36

N-Channel

Single

±20

4

32

95

-

-

17

18.5

1250

$1.0194

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