N-Channel PowerTrench® MOSFET 250V, 50A, 42.5mΩ

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Overview

This N-Channel MOSFET is produced using a PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

  • Consumer Appliances
  • RDS(on) = 36.3mΩ (Typ.) @ VGS = 10V, ID = 25A
  • High performance trench technology for extermly low RDS(on)
  • Low Gate Charge
  • High power and current handing capability

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDB2710

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Active

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

1

245

REEL

800

Y

250

42.5

N-Channel

Single

±30

5

50

260

-

-

-

78

5470

$2.3999

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