N-Channel PowerTrench® MOSFET 200V, 62A, 27mΩ

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Overview

This N-Channel MOSFET is produced using a PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

  • Other Audio & Video
  • Consumer Appliances
  • RDS(on) = 22.9mΩ (Typ.) @ VGS = 10V, ID = 31A
  • High performance trench technology for extermly low RDS(on)
  • Low Gate Charge
  • High power and current handing capability

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDB2614

Active

Pb

A

H

P

D2PAK-3 / TO-263-2

1

245

REEL

800

Y

N-Channel

Single

200

±30

5

62

260

-

-

27

-

76

5435

$2.2578

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