FDB20N50F

Power MOSFET, N-Channel, UniFET^TM, FRFET^®, 500 V, 20 A, 260 mΩ, D2PAK

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Overview

UniFET^TM MOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET^® MOSFET has been enhanced by lifetime control. Its trr is less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Applications

Lighting
Uninterruptible Power Supplies
AC-DC Power Supplies

End Products

LCD / LED / PDP TV

Features

R_DS(on) = 220 mΩ (Typ.) @ V_GS = 10 V, I_D = 10 A
Low Gate Charge (Typ. 50 nC)
Low Cr_ss (Typ. 27 pF)
100% Avalanche Tested
Improve dv/dt Capability
RoHS Compliant
Qualified according to JEDEC Standards JESD22-A113F andIPC/JEDEC J-STD-020D.1

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Channel Polarity

Configuration

V_(BR)DSS Min (V)

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Pricing ($/Unit)

FDB20N50F

Active

D2PAK-3 / TO-263-2

418AJ

245

REEL

800

N-Channel

Single

500

250

260

2550

$1.4231

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MOSFETs | FDB20N50F

Power MOSFET, N-Channel, UniFETTM, FRFET®, 500 V, 20 A, 260 mΩ, D2PAK

Overview

Availability & Samples (size)

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Power MOSFET, N-Channel, UniFET^TM, FRFET^®, 500 V, 20 A, 260 mΩ, D2PAK