Power MOSFET, N-Channel, Standard Gate, 100 V, 268 A, 1.7 mΩ

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Overview

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

  • Motor Control
  • DC-DC Converters
  • Battery Management
  • Solar Inverters
  • Fork Lifts, Multi Rotor Drones, Power Tools
  • Power Supplies
  • Battery Packs and Chargers
  • Power Optimizers
  • Low Qrr
  • Soft recovery body diode
  • Low RDS(on)
  • Small Footprint (5 x 6 mm)
  • RoHS compliant

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDB1D7N10CL7

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Active

CAD Model

Pb

A

H

P

D2PAK-7 / TO-263-7

1

245

REEL

800

Y

100

1.75

N-Channel

Single

±20

4

268

250

-

-

-

116

8285

$3.4397

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