FDB1D7N10CL7

Power MOSFET, N-Channel, Standard Gate, 100 V, 268 A, 1.7 mΩ

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Overview

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

Applications

Motor Control
DC-DC Converters
Battery Management
Solar Inverters

End Products

Fork Lifts, Multi Rotor Drones, Power Tools
Power Supplies
Battery Packs and Chargers
Power Optimizers

Features

Low Q_rr
Soft recovery body diode
Low R_DS(on)
Small Footprint (5 x 6 mm)
RoHS compliant

Material Composition

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MSL Temp (°C)

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Container Qty.

Channel Polarity

Configuration

V_(BR)DSS Min (V)

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Pricing ($/Unit)

FDB1D7N10CL7

Active

D2PAK-7 / TO-263-7

418AY

245

REEL

800

N-Channel

Single

100

±20

268

250

1.75

116

8285

$3.4397

Product Number:

Distributor		Stock	BUY

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MOSFETs | FDB1D7N10CL7

Power MOSFET, N-Channel, Standard Gate, 100 V, 268 A, 1.7 mΩ

Overview

Availability & Samples (size)

Email Sales