FCPF650N80Z

Power MOSFET, N-Channel, SUPERFET^® II, 800 V, 10 A, 650 mΩ, TO-220F

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Overview

SuperFET^® II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. In addition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress.Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.

Applications

AC-DC Power Supplies

End Products

LED Lighting

Features

R_DS(on) = 530 mΩ(Typ.)
Ultra Low Gate Charge (Typ. Q_g = 27 nC)
Low E_oss (Typ. 2.8 uJ @ 400V)
Low Effective Output Capacitance (Typ. C_oss(eff.) = 124 pF)
100% Avalanche Tested
RoHS Compliant
ESD Improved Capability

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Container Qty.

Channel Polarity

Configuration

V_(BR)DSS Min (V)

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Pricing ($/Unit)

FCPF650N80Z

Active, Not Rec

TO-220-3 FullPak

221AT

TUBE

1000

N-Channel

Single

800

DC: ±20, AC: ±30

4.5

30.5

650

1178

$1.3902

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MOSFETs | FCPF650N80Z

Power MOSFET, N-Channel, SUPERFET® II, 800 V, 10 A, 650 mΩ, TO-220F

Overview

Availability & Samples (size)

Email Sales

Power MOSFET, N-Channel, SUPERFET^® II, 800 V, 10 A, 650 mΩ, TO-220F