MOSFETs | FCPF190N60

Power MOSFET, N-Channel, SUPERFET® II, FAST, 600V, 20.2A, 199mΩ, TO-220F

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Overview

SuperFET®II MOSFET is a brand-new high voltage super-junction MOSFET family, utilizes advanced charge-balance technology for outstandingly low on-state resistance and lower gate charge. This advanced MOSFET is tailored not only to minimize conduction loss but also to achieve superior switching performance. Besides these advantages, it also provides extremely higher dv/dt rate and bigger avalanche energy than conventional super-junction MOSFETs. SuperFET II MOSFET is suitable for various switching power applications aiming for system miniaturization and higher efficiency.

  • This product is general usage and suitable for many different applications.
  • 650V @TJ = 150°C
  • Max. RDS(on) = 199mΩ
  • Ultra low gate charge ( Typ. Qg = 57nC )
  • Low effective output capacitance ( Typ. Coss.eff = 160pF )
  • 100% avalanche tested

Material Composition

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

FCPF190N60

Active, Not Rec

CAD Model

Pb

A

H

P

TO-220-3 FullPak

221AT

NA

0

TUBE

1000

N

N-Channel

Single

600

DC: ±20, AC: ±30

3.5

20.2

39

-

-

199

-

57

2220

$1.6135

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