Power MOSFET, N-Channel, SUPERFET® II, Easy Drive, 600 V, 29 A, 125 mΩ, TO-220

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Overview

SuperFET® II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.Consequently, SuperFET II MOSFET easy-drive series offers slightly slower rise and fall times compared to the SuperFET IIMOSFET series. Noted by the “E” part number suffix, this family helps manage EMI issues and allows for easier designimplementation. For faster switching in applications where switching losses must be at an absolute minimum, pleaseconsider the SuperFET II MOSFET series.

  • Industrial Power Supplies
  • Telecom / Server Power Supplies
  • 650 V @TJ= 150°C
  • Typ. RDS(on) = 102 mΩ
  • Ultra Low Gate Charge (Typ. Qg = 75 nC)
  • Low Effective Output Capacitance (Typ. Coss(eff) = 258 pF)
  • 100% Avalanche Tested
  • RoHS Compliant

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FCP125N60E

Active, Not Rec

Pb

A

H

P

TO-220-3

NA

0

TUBE

800

N

N-Channel

Single

600

DC: ±20, AC: ±30

3.5

29

278

-

-

125

-

75

2250

$2.3384

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