Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 30 A, 99 mΩ, TO-220

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Overview

SUPERFET III MOSFET is ON Semiconductor’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.

  • Telecommunication
  • Cloud system
  • Industrial
  • Telecom power
  • Server power
  • EV charger
  • Solar / UPS
  • 700 V @ TJ = 150 oC
  • Ultra Low Gate Charge (Typ. Qg = 61 nC)
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 544 pF)
  • Optimized Capacitance
  • Typ. RDS(on) = 79 mΩ
  • 100% Avalanche Tested
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FCP099N65S3

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Active

CAD Model

Pb

A

H

P

TO-220-3

NA

0

TUBE

800

Y

650

99

N-Channel

Single

±30

4.5

30

227

-

-

-

61

2480

$2.4172

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