Power MOSFET, N-Channel, SUPERFET® II, Easy Drive, 600 V, 37 A, 99 mΩ, TO-220

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Overview

SuperFET® II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET easy-drive series offers slightly slower rise and fall times compared to the SuperFET II MOSFET series. Noted by the "E" part number suffix, this family helps manage EMI issues and allows for easier design implementation. For faster switching in applications where switching losses must be at an absolute minimum, please consider the SuperFET II MOSFET series.

  • Industrial Power Supplies
  • Telecom / Server Power Supplies
  • 650 V @ TJ = 150°C
  • Typ. RDS(on) = 87 mΩ
  • Ultra Low Gate Charge (Typ. Qg = 88nC)
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 309 pF)
  • 100% Avalanche Tested
  • RoHS Compliant

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Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FCP099N60E

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Active

CAD Model

Pb

A

H

P

TO-220-3

NA

0

TUBE

800

Y

600

99

N-Channel

Single

DC: ±20, AC: ±30

3.5

37

357

-

-

-

88

2604

$2.5665

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