FCH110N65F: Power MOSFET, N-Channel, SUPERFET® II, FRFET®, 650 V, 35 A, 110 mΩ, TO-247

Datasheet: MOSFET – N-Channel, SuperFET® II, FRFET® 650 V, 35 A, 110 mΩ
Rev. 4 (318kB)
Product Overview
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Product Change Notification
SuperFET®II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizingcharge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailoredto minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently,SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET®MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
Features
 
  • 700 V @ TJ = 150°C
  • Typ. RDS(on) = 96 mΩ (Typ.)
  • Ultra Low Gate Charge (Typ. Qg = 98 nC)
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 308 pF)
  • 100% Avalanche Tested
  • RoHS Compliant
Applications   End Products
  • AC - DC Power Supply
 
  • LCD / LED / PDP TV
  • Solar Inverter
  • Telecom / Server Power Supplies
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FCH110N65F-F155 Active
Pb-free
Halide free
FCH110N65F TO-247-3 340CH NA Tube 450 $2.2302
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FCH110N65F-F155  
 $2.2302 
Pb
H
 Active   
N-Channel
650
DC: ±20, AC: ±30
5
35
357
-
-
110
-
98
3680
TO-247-3
Case Outlines
340CH   
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