Power MOSFET, N-Channel, SUPERFET® II, 800 V, 46 A, 85 mΩ, TO-247

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Overview

SuperFET® II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

  • AC-DC Power Supply
  • LED Lighting
  • Typ. RDS(on) = 67 mΩ
  • 850 V @ TJ = 150°C
  • Ultra Low Gate Charge (Typ. Qg = 196 nC)
  • Low EOSS(Typ. 18 uJ @ 400 V)
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 568 pF)
  • 100% Avalanche Tested
  • RoHS Compliant

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FCH085N80-F155

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Active

CAD Model

Pb

A

H

P

TO-247-3

NA

0

TUBE

450

N

800

85

N-Channel

Single

DC: ±20, AC: ±30

4.5

46

446

-

-

-

196

8140

$9.5743

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