Power MOSFET, N-Channel, SUPERFET® II, FRFET®, 650 V, 76 A, 41 mΩ, TO-247 4L

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Overview

SuperFET® II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.

  • AC-DC Power Supplies
  • LCD / LED / PDP TV
  • Solar Inverter
  • Telecom / Server Power Supplies
  • 700 V @ TJ = 150°C
  • Typ. RDS(on) = 36 mΩ
  • Ultra Low Gate Charge (Typ. Qg = 229 nC)
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 631 pF)
  • 100% Avalanche Tested
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

FCH041N65EFL4

Active, Not Rec

CAD Model

Pb

A

H

P

TO-247-4

NA

0

TUBE

450

N

N-Channel

Single

650

DC: ±20, AC: ±30

5

76

595

-

-

41

-

229

9446

$8.0892

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