FCD7N60: Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 7 A, 600 mΩ, DPAK

Datasheet: N-Channel SuperFET MOSFET 600 V, 7 A, 600 m-Ohm
Rev. A (547kB)
Product Overview
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Product Change Notification
SuperFET® MOSFET is a first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Features
 
  • 650V @TJ = 150°C
  • Typ. RDS(on) = 530mΩ
  • Ultra low gate charge ( Typ. Qg = 23nC )
  • Low effective output capacitance ( Typ. Coss.eff = 60pF )
  • 100% avalanche tested
  • RoHS compliant
Applications
  • This product is general usage and suitable for many different applications.
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FCD7N60TM Active
Pb-free
Halide free
FCD7N60 DPAK-3 / TO-252-3 369AS 1 260 Tape and Reel 2500 $0.7582
FCD7N60TM-WS Active
Pb-free
Halide free
FCD7N60 DPAK-3 / TO-252-3 369AS 1 260 Tape and Reel 2500 $0.5743
Market Leadtime (weeks) : Contact Factory
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FCD7N60TM  
 $0.7582 
Pb
H
 Active   
N-Channel
Single
600
±30
5
7
83
-
-
600
-
23
710
DPAK-3 / TO-252-3
FCD7N60TM-WS  
 $0.5743 
Pb
H
 Active   
N-Channel
600
±30
5
7
83
-
-
600
-
23
710
DPAK-3 / TO-252-3
Case Outlines
369AS   
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