FCD600N60Z: Power MOSFET, N-Channel, SUPERFET® II, FAST, 600 V, 7.4 A, 600 mΩ, DPAK

Datasheet: FCD600N60Z-D.pdf
Rev. A (716kB)
Product Overview
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Product Change Notification
SuperFET® II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Features
 
  • 650 V at TJ = 150°C
  • Max. RDS(on) = 600 mΩ
  • Ultra-Low Gate Charge ( Typ. Qg = 20nC )
  • Low Effective Output Capacitance ( Typ. Coss.eff = 74 pF )
  • 100% Avalanche Tested
  • ESD Improved Capacity
Applications
  • This product is general usage and suitable for many different applications.
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FCD600N60Z Active
Pb-free
Halide free
FCD600N60Z DPAK-3 / TO-252-3 369AS 1 260 Tape and Reel 2500 $0.5252
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FCD600N60Z  
 $0.5252 
Pb
H
 Active   
N-Channel
Single
600
DC: ±20, AC: ±30
3.5
7.4
89
-
-
600
-
20
840
DPAK-3 / TO-252-3
Case Outlines
369AS   
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