MOSFETs | FCD4N60

Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 3.9 A, 1.2 Ω, DPAK

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Overview

SuperFET® MOSFET is a first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

  • This product is general usage and suitable for many different applications.
  • 650V @TJ = 150°C
  • Typ. RDS(on) = 1.0Ω
  • Ultra low gate charge ( Typ. Qg = 12.8nC )
  • Low effective output capacitance ( Typ. Coss.eff = 32pF )
  • 100% avalanche tested
  • RoHS compliant

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CAD Models

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FCD4N60TM

Active, Not Rec

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

N

N-Channel

Single

600

±30

5

3.9

50

-

-

1200

-

12.8

415

$0.7012

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