N-Channel Logic Level Enhancement Mode Field Effect Transistor 50V 0.22A, 1.6Ω

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Overview

N-Channel Logic Level Enhancement Mode Field Effect Transistor 50V 0.22A, 1.6Ω

  • This product is general usage and suitable for many different applications.
  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Ultra-Small Surface Mount Package
  • RoHS Compliant
  • ESD HBM=2000V as per JEDEC A114A ; ESD CDM = 2000V as per JEDEC C101C

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

BSS138K

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Active

CAD Model

Pb

A

H

P

SOT-23 (TO-236)

1

260

REEL

3000

N

50

-

N-Channel

Single

±12

1.2

220

0.35

2500

1600

-

2.4

58

$0.0417

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