N-Channel Logic Level Enhancement Mode Field Effect Transistor, 50V, 220mA

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Overview

This N-Channel enhancement mode MOSFET is produced using a proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. The BSS138 is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

  • This product is general usage and suitable for many different applications.
  • 0.22 A, 50 V.
    RDS(ON) = 3.5 Ω @ VGS = 10 V. RDS(ON) = 6.0 Ω @ VGS = 4.5 V
  • High density cell design for extremely low RDS(ON).
  • Rugged and Reliable.
  • Compact industry standard SOT-23 surface mount package.

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3

Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

BSS138

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Active

CAD Model

Pb

A

H

P

SOT-23 (TO-236)

1

260

REEL

3000

N

50

3500

N-Channel

Single

-

1.5

0.22

0.36

-

6000

-

1

27

$0.0356

More Details

BSS138-G

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Active

CAD Model

Pb

A

H

P

SOT-23 (TO-236)

1

260

REEL

3000

N

60

3500

N-Channel

Single

-

1.5

220

0.36

-

6000

-

1

-

$0.0799

More Details

BSS138-T

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Obsolete

CAD Model

Pb

A

H

P

SOT-23 (TO-236)

1

260

REEL

3000

N

50

3500

N-Channel

Single

-

1.5

0.22

0.36

-

6000

-

-

27

Price N/A

More Details

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