N-Channel Enhancement Mode Field Effect Transistor 60V, 400mA, 2Ω

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Overview

This N-Channel enhancement mode MOSFET is produced using a proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 500 mA DC. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

  • This product is general usage and suitable for many different applications.
  • Power MOSFET Gate Drivers
  • Servo Motor Control
  • 400 mA, 60 V. RDS(ON) = 2 Ω @ VGS = 10 V.
  • High density cell design for extremely low RDS(ON).
  • Voltage controlled small signal switch.
  • Rugged and reliable.
  • High saturation current capability.

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

BS270

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Active

CAD Model

Pb

A

H

P

TO-92-3

NA

0

BLKBG

10000

Y

60

2000

N-Channel

Single

±20

2.5

0.4

0.625

-

-

-

0.6

20

$0.1041

More Details

BS270-D74Z

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Active

CAD Model

Pb

A

H

P

TO-92-3 LF

NA

0

FNFLD

2000

Y

60

2000

N-Channel

Single

±20

2.5

0.4

0.625

-

-

-

0.6

20

$0.0921

More Details

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