IGBTs | SGS23N60UFD

600V, PT IGBT

Obsolete

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Overview

ON Semiconductor's UFD series of insulated gate bipolar transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature.

  • Other Industrial

  • High speed switching
  • Low saturation voltage : VCE(sat) = 2.1V @ IC = 12A
  • High input impedance
  • CO-PAK, IGBT with FRD : trr = 42ns (typ.)

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

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Co-Packaged Diode

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SGS23N60UFDTU

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

TO-220-3 FullPak

221AT

NA

0

TUBE

1000

N

-

600

12

2.1

-

-

-

80

-

-

-

-

-

Yes

Price N/A

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Reliability Data

Die Related Summary Data

Device: SGS23N60UFDTU

Equivalent to wafer fab process: IGBT

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

IGBT

1

2930462991

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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