IGBTs | SGH30N60RUFD

Discrete, Short Circuit Rated IGBT with Diode

Obsolete

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Overview

onsemi's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.

  • Industrial Motor

  • Short Circuit rated 10us @ TC = 100°C, V GE = 15V
  • High Speed Switching
  • Low Saturation Voltage : VCE(sat) = 2.2 V @ I C = 30A
  • High Input Impedance
  • CO-PAK, IGBT with FRD : trr = 50ns (typ.)

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

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Co-Packaged Diode

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SGH30N60RUFDTU

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

TO-3P-3L

340BZ

NA

0

TUBE

450

N

-

600

48

2.2

-

-

-

50

-

-

-

-

-

Yes

Price N/A

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Reliability Data

Die Related Summary Data

Device: SGH30N60RUFDTU

Equivalent to wafer fab process: IGBT

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

IGBT

1

2930462991

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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