IGBTs | PCRKA20075F8

VE-Trac Chip: Diode EF2 Bare Die for Automotive, 750V, 200A

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Overview

PCRKA20075F8 is a 750 V, 200 A, Extremefast2 (EF2) Diode bare die with a die size of 10 mm x 5 mm.

  • EV/HEV Traction Module
  • General Power Modules

  • xEV

  • AEC-Q101 rev. D qualified for enhanced reliability
  • Maximum junction temperature 175°C
  • Extremefast Technology with soft recovery
  • Low forward voltage: VF = 1.5 V (Typ.) @ IF = 200 A

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

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Co-Packaged Diode

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PCRKA20075F8

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CAD Model

Pb

A

H

P

-

-

NA

0

MTFRM

1

N

-

750

200

-

1.7

-

-

-

-

-

-

-

-

-

$2.8399

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Reliability Data

Die Related Summary Data

Device: PCRKA20075F8

Equivalent to wafer fab process: IGBT

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

IGBT

1

2930462991

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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