IGBT 650 V, 200 A Field Stop Trench Gen3 (FS3) Bare Die. Pairing with PCRKA20065F8

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Overview

This 650V Field Stop Trench Gen3 (FS3) IGBT bare die has a die size of 10mm x 10mm. It can be used in power module with Al wirebonding

  • Traction Module
  • General Purpose Power Module
  • EV/HEV
  • AEC-Q101 Qualified
  • Max Junction Temperature 175°C
  • Positive temperature Co-efficient
  • Ease of Paralleling
  • Short Circuit rated
  • Very Low Saturation voltage: VCE(SAT) = 1.53V (Typ.) @ IC = 200A
  • Optimized for Motor Control Applications

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Pricing ($/Unit)

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PCGA200T65NF8

Active

Pb

A

H

P

-

-

NA

0

MTFRM

1

N

650

200

1.53

-

-

-

-

-

229

5

-

-

No

$10.6837

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