IGBT, 1200V 15A Solar/UPS

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Overview

This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications.

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CAD Models

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

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ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

NGTG15N120FL2WG

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Obsolete

CAD Model

Pb

A

H

P

TO-247-3

NA

0

TUBE

30

N

-

1200

15

2

-

0.37

1.2

-

-

109

10

-

294

No

Price N/A

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