IGBT, 650V 60A Field Stop 2 IGBT

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Overview

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.

  • Half bridge inverter
  • T-Type inverter
  • I-Type inverter
  • Uninterrupted Power supplies (Offline UPS and Online UPS)
  • Solar Inverters / PV inverters
  • Motor Control
  • Extremely Efficient Trench with Field Stop Technology
  • Tjmax = 175°C
  • Soft Fast Reverse Recovery Diode
  • Optimized for High Speed Switching
  • 5µs Short-Circuit Capability
  • These are Pb-Free Devices

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

NGTB60N65FL2WG

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Obsolete

CAD Model

Pb

A

H

P

TO-247

NA

0

TUBE

30

N

-

650

60

1.64

2.13

0.66

1.59

96

6.8

318

5

-

595

Yes

Price N/A

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