IGBT, 650 V Field Stop II, 50 A

Obsolete

Overview

This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. In addition, this new device is packaged in a TO-247-4L, package that provides significant reduction in Eon Losses compared to standard TO-247-3L package. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.

  • Industrial

  • Solar Inverters
  • Uninterruptable Power Supplies (UPS)
  • Neutral Point Clamp Topology

  • Extremely Efficient Trench with Field Stop Technology
  • TJmax = 175 °C
  • Improved Gate Control Lowers Switching Losses
  • Separate Emitter Drive Pin
  • TO-247-4L for Minimal Eon Losses
  • Optimized for High Speed Switching
  • These are Pb-Free Devices

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

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Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

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Co-Packaged Diode

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NGTB50N65FL2WAG

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Obsolete

CAD Model

Pb

A

H

P

TO-247-4

NA

0

TUBE

30

N

-

650

50

1.8

2.1

0.58

0.48

94

6.5

215

-

-

417

Yes

Price N/A

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