IGBTs | NGTB50N65FL2WA

IGBT, 650 V Field Stop II, 50 A

Obsolete

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Overview

This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. In addition, this new device is packaged in a TO-247-4L, package that provides significant reduction in Eon Losses compared to standard TO-247-3L package. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.

  • Industrial

  • Solar Inverters
  • Uninterruptable Power Supplies (UPS)
  • Neutral Point Clamp Topology

  • Extremely Efficient Trench with Field Stop Technology
  • TJmax = 175 °C
  • Improved Gate Control Lowers Switching Losses
  • Separate Emitter Drive Pin
  • TO-247-4L for Minimal Eon Losses
  • Optimized for High Speed Switching
  • These are Pb-Free Devices

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

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Co-Packaged Diode

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NGTB50N65FL2WAG

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

TO-247-4

340AR

NA

0

TUBE

30

N

-

650

50

1.8

2.1

0.58

0.48

94

6.5

215

-

-

417

Yes

Price N/A

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Reliability Data

Die Related Summary Data

Device: NGTB50N65FL2WAG

Equivalent to wafer fab process: IGN IGBT

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

IGN IGBT

12

24556821265

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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