IGBTs | NGTB50N65FL2

IGBT, 650V 50A FS2 Solar/UPS

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Overview

This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softand fast co−packaged free wheeling diode with a low forward voltage.

  • Solar Inverters
  • Uninterruptible Power Supplies (UPS)
  • Welding

  • Extremely Efficient Trench with Field Stop Technology
  • TJmax = 175°C
  • Soft Fast Reverse Recovery Diode
  • Optimized for High Speed Switching
  • 5 µs Short−Circuit Capability

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V(BR)CES Typ (V)

IC Max (A)

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Co-Packaged Diode

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NGTB50N65FL2WG

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CAD Model

Pb

A

H

P

TO-247

NA

0

TUBE

30

Y

-

650

50

1.8

2.1

0.46

1.5

94

8

220

5

-

417

Yes

$3.1129

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Reliability Data

Die Related Summary Data

Device: NGTB50N65FL2WG

Equivalent to wafer fab process: IGN IGBT

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

IGN IGBT

12

24556821265

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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