IGBTs | NGTB50N120FL2

IGBT, 1200V 50A FS2 Solar/UPS

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Overview

This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softand fast co−packaged free wheeling diode with a low forward voltage.

  • Solar Inverter
  • Uninterruptible Power Inverter Supplies (UPS)
  • Welding
  • Extremely Efficient Trench with Field Stop Technology
  • TJmax = 175°C
  • Soft Fast Reverse Recovery Diode
  • Optimized for High Speed Switching
  • 10µs Short Circuit Capability

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Package Type

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MSL Type

MSL Temp (°C)

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ON Target

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Pricing ($/Unit)

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NGTB50N120FL2WG

Lifetime

Pb

A

H

P

TO-247

NA

0

TUBE

30

N

1200

50

2.2

2

1.4

4.4

256

19

311

10

-

535

Yes

$5.281

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