IGBT, Ultra Field Stop -1200V 40A

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Overview

This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Ultra Field Stop Trench construction, and provides superiorperformance in demanding switching applications, offering both low onstate voltage and minimal switching loss. The IGBT is well suited forUPS and solar applications. Incorporated into the device is a soft andfast co−packaged free wheeling diode with a low forward voltage.

  • Solar Inverter
  • Uninterruptible Power Inverter Supplies (UPS)
  • Welding
  • Industrial
  • Extremely Efficient Trench with Ultra Field Stop Technology
  • TJmax = 175°C
  • Soft Fast Reverse Recovery Diode
  • Optimized for High Speed Switching
  • These are Pb−Free Devices

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Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

NGTB40N120FL3WG

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Active

CAD Model

Pb

A

H

P

TO-247

NA

0

TUBE

30

N

-

1200

40

1.7

3

1.1

1.6

86

12

212

-

-

454

Yes

Price N/A

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