IGBTs | NGTB35N60FL2

IGBT, 600V 35A FS2 Solar/UPS

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Overview

This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softand fast co−packaged free wheeling diode with a low forward voltage

  • Solar Inverters
  • Uninterruptible Power Supplies (UPS)
  • Extremely Efficient Trench with Field Stop Technology
  • TJmax = 175°C
  • Soft Fast Reverse Recovery Diode
  • Optimized for High Speed Switching
  • 5µs Short−Circuit Capability

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

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ON Target

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

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NGTB35N60FL2WG

Last Shipments

Pb

A

H

P

TO-247-3

340AL

NA

0

TUBE

30

N

600

35

1.7

2.2

0.28

0.84

68

7

125

5

-

300

Yes

Price N/A

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